[1]陈墨,武花干,包伯成.忆阻电路的韦库模型及其建模分析[J].常州大学学报(自然科学版),2016,(06):104-107.[doi:10.3969/j.issn.2095-0411.2016.06.019]
　CHEN Mo,WU Huagan,BAO Bocheng.Flux-Charge Model of Memristive Circuit and Its Modeling Analysis[J].Journal of Changzhou University(Natural Science Edition),2016,(06):104-107.[doi:10.3969/j.issn.2095-0411.2016.06.019]
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忆阻电路的韦库模型及其建模分析
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2016年06期
页码:
104-107
栏目:
数理科学
出版日期:
2016-11-30

文章信息/Info

Title:
Flux-Charge Model of Memristive Circuit and Its Modeling Analysis
作者:
陈墨; 武花干; 包伯成
常州大学 信息科学与工程学院,江苏 常州 213164
Author(s):
CHEN Mo;  WU Huagan;  BAO Bocheng
School of Information Science and Engineering, Changzhou University, Changzhou 213164, China
关键词:
忆阻器;  电路元件;  韦库关系;  忆阻电路
Keywords:
memristor;  circuit element;  flux-charge relation;  memristive circuit
分类号:
TN 711
DOI:
10.3969/j.issn.2095-0411.2016.06.019
文献标志码:
A
摘要:
电流、电压、电荷和磁通是电路中的4个基本物理量,由此构成了包含忆阻器在内的4种基本元件。然而,最近文献提出,磁通和电荷是一对基本物理量,生成了以忆阻器、忆感器和忆容器引领的3类基本元件。以电阻-忆阻串联电路和忆阻蔡氏电路为例,基于磁通和电荷物理量,提出了忆阻电路的韦库模型,开展了相应的数学建模,并与伏安模型进行了比较分析。结果表明:采用伏安模型,忆阻是动态元件,导致电路的阶数增加; 而采用韦库模型,忆阻是非动态元件,使得电路的阶数维持不变,有利于开展复杂忆阻电路的动力学特性分析。
Abstract:
In the electric circuits, current, voltage, charge and magnetic flux are four basic physical attributes, from which four fundamental circuit elements including memristor are constituted. However, it is recently proposed that magnetic flux and charge are a pair of basic physical attributes and generate three basic element classes leaded by memristor, memcapacitor and meminductor, respectively. Taking resistor-memristor series circuit and memristive Chua’s circuit as examples, the flux-charge models of memristive circuits are proposed using physical attributes of magnetic flux and charge, the corresponding mathematical models are established and the comparative analyses with the voltage-current models are performed. The results indicate that when the voltage-current model is used, memristor is a dynamic element, resulting in the circuit order to increase; while when the flux-charge model is utilized, memristor is a non-dynamic element, implying the circuit order to maintain, which facilitate the analysis of dynamical characteristics in complex memristive circuits.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-05-26。基金项目:国家自然科学基金资助项目(51277017); 江苏省高校自然科学研究面上项目(15KJB510001)。作者简介:陈墨(1982—),女,江苏泰州人,博士,讲师,主要从事电工理论与新技术研究。通讯联系人:包伯成(1965—),E-mail: mervinbao@126.com
更新日期/Last Update: 2016-11-20