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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:

期数:

2000年01期

页码:

53-57

栏目:

出版日期:

2000-03-25

文章信息/Info

Title:

The Optimized Design of Bipolar Transistor According to Temperature Scaling -factors

作者:

高梅芳

江苏石油化工学院计算机科学与工程系, 江苏 常州 213016

Author(s):

GAO Mei -fang

Department of Computer Science and Eng ineering , Jiangsu Institute of Pet rochemical Technology , Changzhou 213016 , China

关键词:

温度比例因子; 电流增益; 截止频率

Keywords:

temperature scaling facto r ; current gain ; cutoff f requency

分类号:

T N 31

文献标志码:

A

摘要:

提出了一种按温度比例因子设计低温双极晶体管的设计规则。在考虑双极晶体管低温效应的前提下, 着重分析了双极晶 体管发射区和基区的浓度及宽度在低温下的变化情况。结合按温度比例子变化后任何特定温度下的双极晶体管电流增益和截止 频率的优化结果, 给出了这些参数在按温度比例因子规则设计时温度比例因子的变化参数。

Abstract:

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained .Firstly , the wo rking characteristics of silicon bipolar t ransistors at low temperature are analy zed and discussed .The phy sical models of current g ain and cutof f f requency fi t in w ith any specific temperature are established .These offer the necessary physical basis to suggest the temperature ─scaling law . On the basis of low temperature effect s of bipolar transistor , the changing condition of the doping concentrat ion in the emit ter and base and the width of the emitter and base are emphatically analyzed .The integ rated program to get temperature -scaling factors is presented .The optimized results of current g ain and cutoff frequency at any specific temperature according to the temperature scaling law are studied .

备注/Memo

备注/Memo:

作者简介:高梅芳(1971 -), 女, 江苏常熟人, 硕士, 讲师, 从事晶体管方面的研究。

常用功能

更新日期/Last Update: 2000-03-25