[1]袁宁一,等.氧化钒薄膜的制备方法及结构性能[J].常州大学学报(自然科学版),2000,(04):1-4.
 YUAN Ning -y i,LI Jin -hua,et al.Preparation and Proper ties of Vanadium Oxides Thin Film[J].Journal of Changzhou University(Natural Science Edition),2000,(04):1-4.
点击复制

氧化钒薄膜的制备方法及结构性能()
分享到:

常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2000年04期
页码:
1-4
栏目:
出版日期:
2000-12-25

文章信息/Info

Title:
Preparation and Proper ties of Vanadium Oxides Thin Film
作者:
袁宁一1 2 李金华1 林成鲁2
1.江苏石油化工学院功能材料实验室, 江苏 常州 213016;2.中国科学院上海冶金研究所信息功能材料国家重点实验 室, 上海200050
Author(s):
YUAN Ning -y i 1 2 LI Jin -hua 1 LIN Chen -lu 2
1 .The Functio nal Materials Laborato ry , Jiangsu Institute of Pet rochemical Technology , ChangZhou 213016 , China ;2 .National Laborato ry of Functional Materials for Informatics , Shanghai Institute of Metallurgy , Chinese Academy Sciences , Shanghai
关键词:
氧化钒晶体氧化钒薄膜薄膜制备方法
Keywords:
vanadium oxide cry stal thin f ilms of vanadium o xides deposition methods of VO x f il
分类号:
T B 43 ;O 484.4
文献标志码:
A
摘要:
氧化钒薄膜在非制冷红外成象器件中的应用已成为国际上研究的热点。各种晶体结构的氧化钒性能差异很大, 为此综述 了不同氧化钒晶体的结构和性能。由于制备方法及工艺条件对薄膜性能有较大影响, 在此介绍了二氧化钒和五氧化二钒薄膜的 几种主要制备方法及对生成膜结构性能的影响。
Abstract:
There has been a lot of interest in vanadium oxides thin films because of their extensive applications in uncooled infrared imaging technology .Different methods preparing VO2 and V2O5 thin films are given and effects of preparing condi tion on film properties are analyzed

参考文献/References:

[1] 苏吉儒, 魏建华, 庄继胜.赴向21 世纪的非制冷热成象技术 [J] .红外与激光工程, 1999 , 28 (3):41.
[2] 罗裕基.无机化学丛书(第八卷)[M] .北京:科学出版社, 1998.224.
[3] Part low D P, Gukovich S R, Radf ord K C , et al.Sw itchable Vanadium Oxide Films by a S ol -Gel Process [J] .J Appl Phys , 1991 , 70 :443.
[4] Kucharczyk D, Niklew ski T .Accu rate X -ray Det erminat ion of the Lat ti ce Parameters and the Thermal Expansion Coef ficients of VO2 near the T ransi tion Temperature [J] .J Appl Cryst , 1979 , 12 :370.
[5] 王永寿.非冷却红外探测器[J] .飞航导弹, 1998 , 12 :44.
[6] Yin Dachun , Xu Niankan , Zhang Jingyu , et al.Vanadium Dioxide Films w ith Good Electrical Swi tching Property [J] .J Phys D:Appl Phys, 1996 , 29 :1 051.
[7] Chain E E .Optical Propert ies of Vanadium Dioxide and Vanadium Pentoxide Thin Films [J] .Appl Opt , 1991 , 30 :2 782.
[8] Jerominek H , Picard F, Vincent D.Vanadium Oxide Films for Opt ical Sw itching and Detecti on [J] .Optical Eng , 1993 , 32 :2 092.
[9] Kuano E , Theil J A .Eff ect s of Microstructure and Nonst oichiomet ry on Elect rical Propert ies of Vanadium Dioxide Films [J] . J Vac S ci Technol , 1989 , A7 :1 314 Kosuge.
[10] Borek M , Qian F, Nagabushnam V , et al.Pulsed Laser Deposi tion of Orien ted VO2 Thin Films on R-cut S apphire Subst rates [J] .Appl Phys Let t , 1993 , 63 :3 288.
[11] Case F C .Modi fications in the Phase Transit ion Properties VO2 Fi lms [J] .J Vac Sci Technol , 1984 , A2 :1 509.
[12] Nyberg G A , Buhrman R A.High Optical Cont rast in VO2 T hin Fi lms Due t o Improved Stoichiomet ry [J] . Thin Solid Films , 1987 , 147 :111.
[13] Case F C .Inf luence of Ion Beam Paramet ers on the Elect rical and Opt ical Propert ies of Ion -assist ed React ively Evaporat ed Vanadium Dioxide Thin Films [J] .J Vac Sci Technol , 1987 , A5 :1 762.
[14] Nagushima M , Wada H .The Oxygen Def iciency Ef fect of VO2 Thin Fi lm s Prepared by Laser Ablation [J] .J M ater Res , 1997 , 12 :416.
[15] Nagushima M , Wada H .Real -t ime Observation of VO2 T hin Fi lms in Phase T ransi tion by Laser Scanning Microscopy [J] .J Vac Technol , 1998 , A16 (1), Jan/ Feb :45.
[16] Felde B , Niessner W, Schalch D, et al.Plasmon Exci tation in Vanadium Dioxide Films [J] .Thin S olid Films , 1997 , 305 : 61.

备注/Memo

备注/Memo:
基金项目:中科院上海冶金研究所离子束开放实验室资助 作者简介:袁宁一(1965 -), 女, 博士, 主要从事功能电子薄膜材料及固态微电子器件方面的研究。
更新日期/Last Update: 2000-12-25