[1]谢飞.残余氯在等离子体增强化学气相沉积 TiN 膜中的偏聚过程研究[J].常州大学学报(自然科学版),2004,(01):1-4.
　XIE Fei.Segregation of Residual Chlorine in Plasma- Enhanced Chemical Vapor Deposited TiN Film[J].Journal of Changzhou University(Natural Science Edition),2004,(01):1-4.
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残余氯在等离子体增强化学气相沉积 TiN 膜中的偏聚过程研究()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2004年01期
页码:
1-4
栏目:
出版日期:
2004-03-25

文章信息/Info

Title:
Segregation of Residual Chlorine in Plasma- Enhanced Chemical Vapor Deposited TiN Film
作者:
谢飞
江苏工业学院材料科学与工程系, 江苏常州2 1 3 0 1 6
Author(s):
XIE Fei
Department of Materials Science and Engineering, Jiangsu Polytechnic University, Changzhou 213016, China)
关键词:
等离子体增强化学气相沉积;  偏聚;  残余氯;  氮化钛
Keywords:
PECVD;  segregation;  residual chlorine;  TiN
分类号:
TG 174.453 , T G 1 74.444
文献标志码:
A
摘要:
通过分析等离子体增强化学气相沉积( P E C V D ) 的特点. 对残余纵的存在机制、等离子体场中离子轰击对氯在T 湘膜 内分布的影响作了进一步的讨论。 运用经典偏聚理沦, 根据空位、位错特点, 建立了P E C V D 过程中离子轰击促进抓向晶界 、 微孔表面等界面处偏聚的模型, 从而完满地解释了文献, 卜, 的有关实验现象。
Abstract:
The auther has further analyzed the residual chlorine involved in the plasma-enhanced chemi? cal vapor deposited CPECVD) TiN film and the effect of ion bombardment in the plasma field on the chlo? rine distribution according to PECVD TiN processing characteristics. A model is given of the enhancing effect on the segregation of chlorine to grain boundaries and internal surface of voids by the ion bombard? ment, which is based on the classical segregation theory and the characteristics of vacancy and dislocation. The experiment results in the literature have thus been explained satisfactorily with the model.

参考文献/References:

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[41 Hilton M R, Middlebrook AM, Rodrigues G, eta!. Studies of Interfacial Composition of TiN Films Formed by Plasma-as? sisted Chemical Vapor Deposition Using an In-situ Scratching Device [Jl. 1 Vac Sci Technol, 1986, A4 (6): 2 787. 「5〕赵化桥. 等离子体化学与工艺〔M〕. 合肥: 中国科学技术大·4 江苏工业学院学报0 0 4 年学出版社, 19 9 3. 1 1. 【6〕李恒德, 肖纪美. 材料表面与界面〔M 〕. 北京: 清华大学出 版社, 1 9 9 0. 9 0 一9 1.
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[8] Ric K-T, Gebauer A, Wochlc]. lnve"ig11tion of P,\-C\'D of TiN: Relations Between Process Parameters, Spectroscopic Measurements and Layer Properties [Jl Surf Coat Techno!. 1993, 60, 385.
[9] Haller I. Importance of Chain Reactions in the Plasma Deposi? tion of Hydrogenated Amorphous Silicon [1].] Vac Sci Tech- nol, 1983, AI: I 376. [I 0] Mclean D. Grain Boundaries in Metals [M]. Clarendon: Oxford Press, 195 7. [II] Watanabe T, Kitamura S, Karashima S. Grain Boundary Hardening and Segregation in Aipha Iron-TiN Alloy [J]. Ac? ta Metall, !980, 28: 455. I 1 2] WiJJiams T M, Stoneham A M, Harries D R. The Segrega? tion of Boron to Grain Boundaries in Solution-treated Type 316 Austenitic Stainless Steel [1]. Met Sci, 1976, 10: 14.

相似文献/References:

[1]谢　飞,何家文.离子氮化-PECVD TiN 膜复合处理 提高切边模具寿命研究[J].常州大学学报(自然科学版),2001,(01):24.
　XIE Fei,HE Jia -w en.Prolonging the Service Life of Edge-Cutting Die by Duplex Treatment of Plasma Nitr iding-PECVD TiN Film[J].Journal of Changzhou University(Natural Science Edition),2001,(01):24.
[2]谢　飞,何家文.循环氩离子轰击对等离子体增强化学气相沉积(PECVD)TiN 膜耐腐蚀性能的影响[J].常州大学学报(自然科学版),2000,(02):27.
　XIE Fei,HE Jia -w en.The Ef fect of Repeated Ar + Bombardment on the Corrosion Resistance of Plasma -enhanced Chemical Vapour Deposited (PECVD)TiN Film[J].Journal of Changzhou University(Natural Science Edition),2000,(01):27.

备注/Memo

备注/Memo:
基金项目: 国家自然科学基金资助( 1 9 3 9 2 3 0 0 一5) 作者简介: 谢飞( 1 9 64 一) . 男, 上海人, 博士, 副教授. 主要从事新材料与材料表面工程方面的研究。
更新日期/Last Update: 2004-03-25