[1]袁宁一,李金华,范丽宁,等.氧化锌薄膜的P型掺杂研究现状[J].常州大学学报(自然科学版),2005,(04):54-57.
　YUAN Ning-yi,LI Jin-hua,FAN Li-ning,et al.Investigation of p-Type Doping in Zinc Oxide Thin Films[J].Journal of Changzhou University(Natural Science Edition),2005,(04):54-57.
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氧化锌薄膜的P型掺杂研究现状()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2005年04期
页码:
54-57
栏目:
出版日期:
2005-12-25

文章信息/Info

Title:
Investigation of p-Type Doping in Zinc Oxide Thin Films
作者:
袁宁一;  李金华;  范丽宁;  周懿
江苏工业学院功能材料实验室江苏 常州 213016
Author(s):
YUAN Ning-yi;  LI Jin-hua;  FAN Li-ning;  ZHOU Yi
Laboratory of Functional Materials, Jiangsu Polytechnic University, Changzhou 213016, China
关键词:
氧化锌薄膜型掺杂空穴载流子浓度迁移率
Keywords:
ZnO thin film;  p-type doping;  hole concentration;  mobility
分类号:
TB 43;O 484.4
文献标志码:
A
摘要:
ZnO薄膜作为一种多用途的光电材料, 一直受到国内外学术界的广泛关注。为了开发ZnO短波长光电器件, 首要解决的 关键问题是氧化锌的P型掺杂。综述了目前国际上常用的氧化锌P型掺杂方法, 对不同方法制备的P型ZnO薄膜的性能进行了 分析比较。
Abstract:
Very recently, zinc oxide (ZnO) has attracted much attention because of its wide application for various optoelectronic devices, such as UV photo-detectors and emitting diodes. In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved. Different p-type do? ping in ZnO films were summed up. The characteristics including resistivity hole concentration, and mob? ility of p-type ZnO thin films prepared by different methods were compared.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介衰宁一(1966一), 女, 江苏南京人, 副教授, 博士。
更新日期/Last Update: 2005-12-25