[1]陈红敏,丁建宁,等.退火处理对氢化纳米晶/ 非晶硅两相薄膜的 结构和光学性能的影响[J].常州大学学报(自然科学版),2010,(03):1-6.
 CHEN Hong- min,DING Jian- ning,,et al.Influence of Thermal Annealing on Micro- Structure and Optical Property of nc/ Ac- Si: H Films[J].Journal of Changzhou University(Natural Science Edition),2010,(03):1-6.
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退火处理对氢化纳米晶/ 非晶硅两相薄膜的 结构和光学性能的影响()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2010年03期
页码:
1-6
栏目:
材料科学与工程
出版日期:
2010-09-25

文章信息/Info

Title:
Influence of Thermal Annealing on Micro- Structure and Optical Property of nc/ Ac- Si: H Films
作者:
陈红敏1 丁建宁1 2 3 王秀琴1 郭立强2 袁宁一1 3
11 常州大学低维材料微纳器件及系统研究中心, 江苏 常州 213164; 21 江苏大学微纳米研究中心, 江苏镇江212013; 31 常州市新能源重点实验室, 江苏 常州 213164
Author(s):
CHEN Hong- min1 DING Jian- ning1 2 3 WANG Xiu- qin1 GUO Li- Q iang2 YUAN Ning- y i1 3
1.Low- Dimensio nal Materials Micro- Nano Devices and Systems Research Center, Chang zhou Un-i v ersity, Chang zhou 213164, China; 2. Micro- Nano Research Center, Jiang su Univer sity, Zhenjiang 212013, China; 3. Key Labor ator y o f New Energ y, Chang zh
关键词:
氢化纳米晶/ 非晶硅两相薄膜 退火处理 稳定性
Keywords:
hydr ogenared nanocrystalline/ amorphous silicon f ilms annealing stablity
分类号:
O 472
文献标志码:
A
摘要:
利用等离子化学气相沉积( PE CVD) 方法低温制备不同晶态比的氢化纳米晶/ 非晶硅两相薄膜, 在高纯氮气下对其进行 不同温度( 300- 500 e ) 的退火处理, 并利用X 射线衍射( XRD) ﹑拉曼光谱( Ram an ) 、原子力显微镜( AFM ) 、傅里叶红 外光谱( FT - IR) 和紫外- 可见光透射谱( U V- VIS) 对其结构和光学性能进行研究。结果显示400- 500 e 退火在一定程度 上提高了低晶态比的氢化纳米硅/ 非晶硅两相薄膜的结晶度, 而高晶态比的氢化纳米硅/ 非晶硅两相薄膜在500 e 下退火 20 min, 其结构和光学特性显示出比较好的热稳定性。
Abstract:
Hydrog enared nano cry stalline/ amo rphous silico n ( nc/ Ac- Si: H) f ilms w ere prepared by plasma enhanced chemical vapor deposition ( PECVD) , then w ere thermal t reated using rapid annealing equipment in nitr ogen ambient at dif ferent temperatures ( 300- 500 e ) . The str uctures and opt ical proper ty w ere ex amined by X - ray dif fraction ( XRD) , Raman spect rometer ( Raman) , atomic fo rce micro scopy ( AFM) and UV - v isible t ransmission spect ra ( UV - VIS) , etc. T he measurement result s indicated that the annealing at 500 e could improve the crystallizat ion o f nc/ ac- Si: H f ilms w ith a low crystallizat ion rate. How ever the nc/ ac- Si: H films w ith a high cry stallizatio n rate show a thermal stability under the annealing at 500 e for 20 min.

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备注/Memo

备注/Memo:
基金项目: 青兰工程资助项目( 2008- 04) ; 江苏省科技支撑项目( BE20080030) ; 常州科技支撑项目( E2008014) ; 常州科技平台( CM2008301) ; 江苏省高校基金项目( 07KJB430023) 作者简介: 陈红敏( 1980- ) , 女, 河南驻马店人, 硕士生; 通讯联系人: 丁建宁。
更新日期/Last Update: 2010-09-25