[1]李建凯,袁宁一,丁建宁.一种N型轻掺杂氢化硅基薄膜的欧姆接触[J].常州大学学报(自然科学版),2011,(04):5-9.
　LI Jian-kai,YUAN Ning-yi,DING Jian-ning.Researth on Ohmic Contacts of Lightly N-Doped Si:H Thin Film[J].Journal of Changzhou University(Natural Science Edition),2011,(04):5-9.
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一种N型轻掺杂氢化硅基薄膜的欧姆接触()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2011年04期
页码:
5-9
栏目:
材料科学与工程
出版日期:
2011-09-30

文章信息/Info

Title:
Researth on Ohmic Contacts of Lightly N-Doped Si:H Thin Film
作者:
李建凯1; 袁宁一1; 2; 丁建宁1; 2
1常州大学 低维材料与微纳器件中心，江苏 常州 213164;2江苏省太阳能电池材料与技术重点实验室，江苏 常州 213164
Author(s):
LI Jian-kai 1; YUAN Ning-yi 1; 2; DING Jian-ning1; 2
1、Center for Low-Dimensional Materials,Micro-Nano Devices and System ,Changzhou University, Changzhou 213164, China； 2、Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164, China
关键词:
氢化硅基薄膜; 欧姆接触; 能带结构; 费米能级
Keywords:
ohmic contact;  width of forbidden bandwidth ;  Fermi level ; Si:H thin film
分类号:
TQ 320 ;TN 304
文献标志码:
A
摘要:
使用等离子体增强化学气相沉积方法制备了一组磷掺杂氢化硅基薄膜。I-U曲线显示薄膜与铝电极形成了良好的欧姆接触。霍尔测试结果表明该组样品为轻掺杂；利用拉曼光谱和紫外-可见吸收光谱对薄膜的微结构和光学带隙进行了表征，并从薄膜能带结构出发探讨了形成欧姆接触的原因。
Abstract:
A set of samples with different crystallization rates of N-type lightly doped hydrogenated silicon films have been prepared by plasma enhanced chemical vapor deposition(PECVD).Hall test showed the samples are lightly doped.The I-U curve of thin film contact with aluminum has been tested.Result showed that they are good ohmic contacts. Band structure and optical band gap of the films were characterized by Raman spectrum and UV-visible absorption spectra. Analysis revealed that the unique band structure of thin films is an important reason for the formation of ohmic contact.

参考文献/References:

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备注/Memo

备注/Memo:
基金项目：国家高技术研究发展计划（2011AA050511）；江苏省科技支撑项目（BY2010122） 作者简介：李建凯（1986—），男，河南南阳人，硕士生。
更新日期/Last Update: 2011-09-30