[1]陈明明,袁宁一,丁建宁,等.电容耦合等离子体化学气相沉积系统二维射频放电及薄膜制备工艺的研究[J].常州大学学报(自然科学版),2012,(02):5-10.
　CHEN Ming-ming,YUAN Ning-yi,DING Jian-ning,et al.Two-Dimensional Modelling of Radio-Frequency Discharges for Plasma Chemical Vapor Deposition System and Thin Film Deposition Process[J].Journal of Changzhou University(Natural Science Edition),2012,(02):5-10.
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电容耦合等离子体化学气相沉积系统二维射频放电及薄膜制备工艺的研究()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2012年02期
页码:
5-10
栏目:
材料科学与工程
出版日期:
2012-03-30

文章信息/Info

Title:
Two-Dimensional Modelling of Radio-Frequency Discharges for Plasma Chemical Vapor Deposition System and Thin Film Deposition Process
作者:
陈明明1; 袁宁一1; 2; 丁建宁1; 2; 赵亚芝1
1.常州大学 低维材料与微纳器件中心,江苏 常州 213164; 2.江苏省太阳能电池材料与技术重点实验室,江苏 常州 213164
Author(s):
CHEN Ming-ming1;  YUAN Ning-yi1; 2;  DING Jian-ning1; 2;  ZHAO Ya-zhi1
1.Center for Low-Dimensional Materials, Micro-Nano Devices and System, Changzhou University, Changzhou 213164, China; 2.Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou 213164, China
关键词:
等离子体化学气相沉积;  二维自适应模型;  电子密度;  沉积速率
Keywords:
plasma chemical vapor deposition;  two-dimensional self-consistent model;  electron density;  depositon rate
分类号:
O 441.539
文献标志码:
A
摘要:
通过建立二维自适应模型,对等离子体化学气相沉积系统反应室中SiH4/H2在射频辉光放电条件下的多物理场进行仿真模拟,模拟结果显示:当射频功率和硅烷体积分数增大时,极板间电子密度增大,薄膜沉积速率也随之加快,但沉积的均匀性变差。结合利用该PECVD设备制备的薄膜微结构和沉积速率测试结果,得出射频功率为80 W,SiH4体积分数为1%时,薄膜的平均晶粒大小和晶化率最大,薄膜沉积速率较快且均匀性较好。
Abstract:
A two-dimensional self-consistent numerical code, including multi-physics, has been developed for the modeling of hydrogenated silicon film deposition from SiH4/H2 radio-frequency glow discharges in plasma enhanced chemical vapor deposition reaction chamber. The calculation results show that both the electron density between two electrodes and deposition rate of films increase with the increase of radio-frequency power and volume fraction of silane, but the deposition becomes non-uniform. Using the PECVD equipment to prepare the hydrogenated silicon films, the appropriate process parameters are obtained at radio-frequency power of 80 W and volume fraction of silane of 1%, the average crystallization size and crystallization volume fraction of the thin films reach to the maximum, the film deposition rate is faster and the deposition is more uniform.

参考文献/References:

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备注/Memo

备注/Memo:
基金项目:江苏省科技基金项目(BE2009028, BY2010122) 作者简介:陈明明(1987 —),女,江苏泰州人,硕士生; 通讯联系人:袁宁一。
更新日期/Last Update: 2012-03-30