[1]陈强,张春渤,谢建生,等.离子束增强沉积制备Li掺杂ZnO薄膜[J].常州大学学报(自然科学版),2014,(01):6-9.[doi:10.3969/j.issn.2095-0411.2014.01.002]
　CHEN Qiang,ZHANG Chun-bo,XIE Jian-sheng.Li Doped ZnO Thin Films Prepared by IonBeam Enhanced Deposition Method[J].Journal of Changzhou University(Natural Science Edition),2014,(01):6-9.[doi:10.3969/j.issn.2095-0411.2014.01.002]
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离子束增强沉积制备Li掺杂ZnO薄膜()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2014年01期
页码:
6-9
栏目:
材料科学与工程
出版日期:
2014-02-28

文章信息/Info

Title:
Li Doped ZnO Thin Films Prepared by IonBeam Enhanced Deposition Method
作者:
陈强；张春渤；谢建生；
常州大学 数理学院,江苏 常州 213164
Author(s):
CHEN Qiang; ZHANG Chun-bo; XIE Jian-sheng
School of Physics and Mathematics,Changzhou University,Changzhou 213164,China
关键词:
Li掺杂; 离子束增强沉积; 退火
Keywords:
Li doped;  Ion beam enhanced deposition;  annealed
分类号:
TN21
DOI:
10.3969/j.issn.2095-0411.2014.01.002
文献标志码:
A
摘要:
利用离子束增强沉积(IBED)法制备了Li掺杂ZnO薄膜(LZO),溅射靶为Li/Zn原子比为5%ZnO的陶瓷靶,实验结果显示:IBED法制备的(LZO)薄膜具有ZnO纤锌矿结构,在500 ℃高纯氩气下退火35 min,薄膜表现为p型导电, 薄膜的最低电阻率为35.03 Ω·cm,制备的薄膜在可见光范围内的平均透过率在80%以上,p型LZO薄膜禁带宽度小于本征ZnO(3.37 eV)。
Abstract:
Li doped ZnO films were prepared on glass substrates by ionbeam enhanced deposition method. The sputtering target was ZnO ceramic target with Li/Zn 5 at.%. The experimental results show that Li doped ZnO films were found to be a ZnO wurtzite structure. Electrical property studies indicated that the doped ZnO film annealed at 500 ℃ in Argon for 35 mins showed ptype with a lowest resistivity of 35.03 Ω·cm. The transmittance of Li doped ZnO films in visible range is above 80%, and the forbidden band of ptype LZO film is smaller than intrinsic ZnO(3.37 eV).

参考文献/References:

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备注/Memo

备注/Memo:
作者简介:陈强(1989-),男,山西长治人,硕士生。
更新日期/Last Update: 2014-02-20