[1]曹玉春,陈亚飞,周慧慧,等.功率型LED结温电学法测量研究[J].常州大学学报(自然科学版),2016,(02):88-92.[doi:10.3969/j.issn.2095-0411.2016.02.017]
　CAO Yuchun,CHEN Yafei,ZHOU Huihui,et al.The Study of Electrical Measurement Method of High Power LED Junction Temperature[J].Journal of Changzhou University(Natural Science Edition),2016,(02):88-92.[doi:10.3969/j.issn.2095-0411.2016.02.017]
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功率型LED结温电学法测量研究()
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常州大学学报(自然科学版)[ISSN:2095-0411/CN:32-1822/N]

卷:
期数:
2016年02期
页码:
88-92
栏目:
计算机与信息工程
出版日期:
2016-03-30

文章信息/Info

Title:
The Study of Electrical Measurement Method of High Power LED Junction Temperature
作者:
曹玉春; 陈亚飞; 周慧慧; 唐波
常州大学 石油工程学院,江苏 常州 213016
Author(s):
CAO Yuchun; CHEN Yafei; ZHOU Huihui; TANG Bo
School of Petroleum Engineering, Changzhou University, Changzhou 213016, China
关键词:
功率型LED; 结温; 热阻; 电学法
Keywords:
highpower LED;  junction temperature;  thermal resistance;  electrical measurement method
分类号:
TK 8
DOI:
10.3969/j.issn.2095-0411.2016.02.017
文献标志码:
A
摘要:
随着节能技术的发展,LED作为一种半导体照明技术,得到研究者的关注。以此为背景,针对LED灯工作过程中产生大量热量的散热技术开展研究。基于LED正向电压随温度变化的原理,运用电学法,以1W普通正装GaN基LED为例,对其温度系数和正向压降进行测量,分析得出热阻与结温值。并利用红外热像仪法和管脚温度法对电学法测温结果进行了验证,证明了该方法的测温精度。
Abstract:
With the development of energysaving technologies, LED, as a technology of semiconductor lighting, has got concern by researchers. Under this background, the heat dissipation technology of LED is studied on the mass heat produced when it woks. Based on the relationship between LED forward voltage and the temperature, the electrical measurement method is presented in this paper. By measuring the temperature coefficient and the forward voltage of 1W ordinary GaNbased LED, the thermal resistance and junction temperature are analyzed and obtained. Finally, the accuracy of this measurement method is verified by comparison with the infrared thermal imaging method and pin temperature method.

参考文献/References:

［1］YUNG K C, YUNG H L, CHOY H S. Heat transfer analysis of a highbrightness LED array on PCB under different placement configurations［J］. International Communications in Heat and Mass Transfer, 2014, 53: 7986.
［2］LIU D J,YANG H Y,YANG P.Experiment and numerical approach on junction temperature of highpower LED［J］. Microelectronics Reliability, 2014, 54(5): 926931.
［3］郭常青, 闫常峰, 方朝君,等. 大功率LED散热技术和热界面材料研究进展［J］. 半导体充电, 2011,32(6): 749755.
［4］付贤政, 胡良兵. LED灯的散热问题研究［J］. 照明工程学报, 2011, 22(3): 7377.
［5］FARANDA R,GUZZETTI S,LAZAROIU G C, et al. Refrigerating liquid prototype for LEDs thermal management［J］. Applied Thermal Engineering， 2012, 48: 155163.
［6］JAYAWARDENA A,LIU Y W. Analysis of three different junction temperature estimation methods for AC LEDs［J］. SolidState Electronics, 2013(86): 1116.
［7］WEN P Y, LI D Y,ZHANG S M, et al. High accuracy thermal resistance measurement in GaN／InGaN laser diodes［J］. SolidState Electronics, 2015(106): 5053.
［8］XI Y,XI J Q,GESSMANN T, et al. Junction and Carrier temperature measurement in deepultraviolet lightemitting diodes using three methods［J］. Applied Physics Letters, 2005, 86(3): 031907.
［9］JIANG F Y,LIU W H, LI Y Q, et al. Research on the junctiontemperature characteristic of GaN lightemitting diodes on Si substrate［J］. Journal of Luminescence, 2007(122): 693695.
［10］李秉乾, 布良基, 甘雄文. LED正向压降随温度变化关系研究［J］. 光子学报, 2003, 32(11): 13491351.
［11］中国人民共和国工业和信息化部. 半导体发光二极度管测试方法：SJ/T11394—2009［S］. 北京：中国标准出版社，2003.
［12］QIAO Y B,FENG S W,XIONG C, et al. The thermal properties of AlGaAs／GaAs laser diode bars analyzed by the transient thermal technique［J］. SolidState E￣l￣e￣c￣t￣r￣onics, 2013(79): 192195.
［13］DING R，TANG Y，LI Z. Thermal and optical investigations of high power LEDs with metal embedded printed circuit boards［J］. International Communicatins in Heat and Mass Transfor,2015,66(1):3239.
［14］中华人民共和国信息产业部. 半导体发光二极管热阻抗测试方法：SJ 20788—2000［S］. 北京：中国标准出版社, 2003.
［15］XI Y,SCHUBERT E F.Junction temperature measurement in GaN ultraviolet lightemitting diodes using diode forward voltage method［J］. Applied Physics Letters, 2004, 85(12): 21632165.
［16］饶丰, 葛志晨. LED结温测量方法［J］. 照明工程学报, 2011, 22: 4650.
［17］肖炜, 刘一兵. 一种测量功率型LED热阻的方法［J］. 低温与超导, 2011, 39(6): 8082.
［18］蔡涛, 段善旭, 康勇. 半导体器件热特性的光学测量技术及其研究进展［J］. 激光与光电子学进展, 2008, 45(6): 5158.
［19］毛德丰, 郭伟玲, 高国. 功率LED结温和热阻在不同电流下性质研究［J］. 固体电子学研究与进展, 2010, 30(2): 309312.
［20］范宇, 龚伟, 李农. 基于ARM的LED显示屏异步控制系统［J］. 常州大学学报(自然科学版), 2013, 25(4): 9092.

备注/Memo

备注/Memo:
收稿日期：20150504。基金项目：常州市2012自然科学基金资助（CJ20120024）。作者简介：曹玉春（1973—），男，江苏盐城人，博士，副教授，主要从事能源高效利用研究。
更新日期/Last Update: 2016-03-20